5 SIMPLE STATEMENTS ABOUT SIC SCHOTTKY BARRIER DIODES EXPLAINED

In this paper, soon after a short dialogue on the basics in the metal/4H-SiC Schottky barrier formation and its electrical characterization, We are going to give an summary on The present materials and processing remedies for that fabrication of Schottky contacts to 4H-SiC.15–0.45 V, and p-type semiconductors are employed only seldom. Titanium s